Device families by repetitive voltage class and disc diameter
UDRM, URRM | 30 mm | 38 mm | 52 mm | 80 mm | 100 mm |
---|---|---|---|---|---|
4400 V | TFI 473‑1600 | ||||
3400 V | TFI 353‑800 | ||||
2800 V | TFI 353‑1000 | TFI 273‑2000 | TFI 393‑2500 | ||
2200 V | TFI 371‑200 TFI 333‑320 | TFI 243‑400 TFI 343‑500 | TFI 253‑800 TFI 253‑1000 | ||
1500 V | TFI 272‑200 | TFI 143‑400 TFI 243-500 TFI 243-630 | TFI 153‑1000 TFI 153‑1250 | ||
1400 V | TFI 173‑2000 | ||||
1100 V | TFI 172‑200 TFI 171‑250 TFI 171C250 TFI 133‑400 |
Example order code
1. | 2. | 3. | 4. | 5. | 6. | 7. |
---|---|---|---|---|---|---|
TFI | 153 | 1000 | 14 | 7 | 7 | 2 |
- Fast distributed‑gate thyristor (device series prefix “TFI”)
- Design version
- Mean on‑state current ITAV, A
- Voltage code — e.g. 14 → 1400 V
- Group for critical rate of off‑state voltage (du/dt)crit (6 ≥ 500 V/µs; 7 ≥ 1000 V/µs)
- Turn‑off‑time group tq @ 50 V/µs (1 ≤ 63 µs … 7 ≤ 16 µs)
- Turn‑on‑time group tgt (1 ≤ 4 µs; 2 ≤ 3.2 µs)