Device families by repetitive voltage class and disc diameter
| UDRM, URRM | 32 mm | 40 mm | 55 mm | 80 mm |
|---|---|---|---|---|
| 1400 V | TFI 153S‑800 TFI 153S‑1000 | |||
| 1200 V | TFI 133S‑400 | TFI 173S‑1250 | ||
| 1100 V | TFI 143S‑500 |
Example order code
| 1. | 2. | 3. | 4. | 5. | 6. | 7. | 8. |
|---|---|---|---|---|---|---|---|
| TFI | 153 | S | 800 | 12 | 7 | 9 | 3 |
- Fast strong distributed‑gate thyristor (“S” series)
- Design version
- Strong distributed anode field gate (S‑index)
- Mean on‑state current ITAV, A
- Voltage code (e.g. 12 → 1200 V)
- Critical rate of rise of off‑state voltage – group 6 ≥ 500 V/µs, group 7 ≥ 1000 V/µs
- Turn‑off‑time group tq @ 50 V/µs (1 ≤ 63 µs … 7 ≤ 16 µs)
- Turn‑on‑time group tgt (1 ≤ 4 µs, 2 ≤ 3.2 µs)
| Type | UDRM, URRM (V range) |
ITAV (A @ TC) |
ITSM (kA / 10 ms) |
UTM/ITM (V / A @ 25 °C) |
UT(TO) (V) |
RT (mΩ) |
tq (µs @ 50 V/µs) |
tgt (µs @ 25 °C) |
(di/dt)crit non‑rep / rep (A / µs) |
(du/dt)crit (V / µs) |
IGT/UGT (A / V) |
RthJC (°C / W) |
Tjmax (°C) |
Fig. |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TFI 133S‑400 | 300 – 1200 | 400 (90) | 8.0 | 2.4 / 1256 | 1.45 | 0.29 | 6.3; 8; 10 | 2.5 | 1600 / 800 | 500; 1000 | 0.3 / 2.5 | 0.032 | 125 | 11 |
| TFI 143S‑500 | 300 – 1400 | 500 (90) | 9.0 | 2.4 / 1570 | 1.46 | 0.27 | 6.3; 8; 10; 12.5 | 2.5 | 1600 / 800 | 500; 1000 | 0.3 / 2.5 | 0.032 | 125 | 11 |
| TFI 153S‑800 | 600 – 1400 | 800 (88) | 18.0 | 2.35 / 2512 | 1.40 | 0.26 | 8; 10; 12.5; 16 | 3.2 | 2000 / 1250 | 500; 1000 | 0.3 / 2.5 | 0.021 | 125 | 12 |
| TFI 153S‑1000 | 600 – 1400 | 1000 (85) | 19.0 | 2.25 / 3140 | 1.35 | 0.22 | 10; 12.5; 16; 20 | 3.2 | 2000 / 1250 | 500; 1000 | 0.3 / 2.5 | 0.021 | 125 | 12 |
| TFI 173S‑1250 | 800 – 1400 | 1250 (85) | 28.0 | 2.55 / 3925 | 1.50 | 0.17 | 12.5; 16; 20; 25 | 3.2 | 2000 / 1250 | 500; 1000 | 0.3 / 2.5 | 0.015 | <
