Device families grouped by repetitive voltage class and chip diameter
UDRM, URRM | 19 mm | 24 mm | 30 mm | 38 mm | 55 mm | 80 mm |
---|---|---|---|---|---|---|
800 V | T 143‑1000 T 143‑1250 | T 153‑1600 T 153‑2000 | ||||
1000 V | T 173‑3200 | |||||
1600 V | T 151‑100 | |||||
1800 V | T 161‑160 T 161‑200 | T 271‑320 T 233‑500 | T 243‑630 T 243‑800 | T 253‑1000 T 253‑1250 | T 273‑2500 | |
2400 V | T 371‑320 T 333‑320 | |||||
2600 V | T 373‑2000 | |||||
2800 V | T 353‑1000 | |||||
3000 V | T 343‑500 T 343‑630 | |||||
3600 V | T 443‑500 | T 353‑800 T 453‑630 T 453‑800 | T 473‑1600 | |||
4200 V | T 553‑800 | |||||
4400 V | T 553‑500 T 553‑630 | T 573‑1250 | ||||
4600 V | T 543‑400 | |||||
6000 V | T 753‑500 |
Example order code
1. | 2. | 3. | 4. | 5. | 6. |
---|---|---|---|---|---|
T | 253 | 1250 | 18 | 7 | 3 |
- Phase‑control thyristor
- Design version
- Mean on‑state current ITAV, A
- Voltage code — 18 → 1800 V etc.
- Group for critical rate of off‑state voltage (du/dt)crit (6 ≥ 500 V/µs; 7 ≥ 1000 V/µs)
- Turn‑off time group tq (du/dt = 50 V/µs; C2 ≤ 630 µs … X2 ≤ 125 µs, A3 ≤ 100 µs, B3 ≤ 80 µs)