Symbol	Parameter
U_DRM	Repetitive peak off‑state voltage
U_RRM	Repetitive peak reverse voltage
U_RSM	Non‑repetitive peak reverse voltage
I_TAV	Mean on‑state current
I_TRMS	RMS on‑state current
I_TSM	Surge on‑state current
i²t	Limiting load integral
T_stg	Storage temperature
T_j	Junction temperature
T_c	Case temperature
M	Tightening torque
F	Mounting force
U_TM	Peak on‑state voltage
U_T(TO)	Threshold voltage
r_T	Slope resistance
I_RRM	Repetitive peak reverse current
I_GT	Gate trigger current
U_GT	Gate trigger voltage
I_GD	Gate non-trigger direct current
U_GD	Gate non-trigger direct voltage
I_RGM	Gate non‑trigger (latching) current
I_L	Latching current
I_H	Holding current
t_q	Turn‑off time
t_gt	Turn‑on time
t_d	Delay time
t_s	Storage time
(di/dt)_crit	Critical rate of rise of on‑state current
(du/dt)_crit	Critical rate of rise of off‑state voltage
P_RSM	Surge reverse power dissipation (10 µs)
R_thJC	Thermal resistance, junction‑case

THYRISTOR GROUP CODES

(du/dt)_crit — Critical Rate of Rise of Off‑State Voltage

t_q — Phase‑Control Thyristors (50 V/µs)