| UDRM | Repetitive peak off‑state voltage |
| URRM | Repetitive peak reverse voltage |
| URSM | Non‑repetitive peak reverse voltage |
| ITAV | Mean on‑state current |
| ITRMS | RMS on‑state current |
| ITSM | Surge on‑state current |
| i2t | Limiting load integral |
| Tstg | Storage temperature |
| Tj | Junction temperature |
| Tc | Case temperature |
| M | Tightening torque |
| F | Mounting force |
| UTM | Peak on‑state voltage (25 °C) |
| UT(TO) | Threshold voltage |
| rT | Slope resistance |
| IRRM | Repetitive peak reverse current |
| IGT | Gate trigger current |
| UGT | Gate trigger voltage |
| IGQM | Gate non‑trigger (latching) current |
| IL | Latching current |
| IH | Holding current |
| tq | Turn‑off time (50 V/µs) |
| tgt | Turn‑on time |
| td | Delay time |
| ts | Storage time |
| (di/dt)crit | Critical rate of rise of on‑state current |
| (du/dt)crit | Critical rate of rise of off‑state voltage |
| PRSM | Surge reverse power dissipation (10 µs) |
| RthJC | Thermal resistance, junction‑case |
